View RU190N10Q_4462268.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

c opyright r uichips semiconductor co . , ltd rev. c C j an ., 2010 www. ruichips .com ru 190n10 n - channel advanced power mosfet features pin description to - 220 to - 220f to - 263 to - 247 n - channel mosfe t symbol parameter rating unit common ratings ( t a =25c unless otherwise noted) v dss drain - source voltage 100 v gss gate - source voltage 25 v t j maximum junction temperature 175 c t stg storage temperature range - 55 to 175 c i s diode continuous forward current t c =25c 190 a mounted on large heat sink i dp 300 m s pulsed drain current tested t c =25c 700 t c =25c 190 i d continue drain current t c = 100 c 140 a t c =25c 400 p d maximum power dissipation t c = 100 c 220 w r q jc thermal resistance - junction to case 0.45 r q j a thermal resistance - junction to ambient 62.5 c/w drain - source avalanche ratings storage temperature range - 55 to 150 e as avalanche energy , single pulsed 2000 mj absolute maximum ratings 100 v/ 190 a r ds ( on ) = 6.5 m w ( typ.) @ v gs = 10 v avalanche rated reliable and rugg ed lead free and green devices available applications automotive applications and a wide variety of other applications high efficiency synchronous in smps high speed power switching
c opyright ruichips semiconductor co . , ltd rev. c C j an ., 2010 2 www. ruichips .c om ru190n10 electrical characteristics ( t a =25 c unless otherwise noted) ru190n 10 symbol parameter test condition min. typ. max. unit static characteristic s bv dss drain - source breakdown voltage v gs = 0v , i ds = 250 m a 100 v v ds = 100 v, v gs =0v 1 i dss zero gate voltage drain current t j =85 c 30 m a v gs ( th) gate threshold voltage v ds =v gs , i ds = 250 m a 2 3 4 v i gss gate leakage current v gs = 25 v, v ds =0v 10 0 n a r ds ( on ) drain - source on - state resistance v gs = 10 v, i ds = 6 0 a 6 . 5 8.0 m w notes : pulse width limited by safe operating area. current limited by package( limitation current is 75a ) pulse test ; p ulse width 3 00 m s, duty cycle 2% . guaranteed by design, not subject to p roduction testing . d iode characteristics v sd diode forward voltage i sd = 6 0 a, v gs =0v 0.8 1.3 v t rr reverse recovery time 68 ns q rr reverse recovery charge i sd = 6 0 a, dl sd /dt=100a/ m s 130 nc d ynamic characteristics r g gate resistance v gs = 0 v,v ds =0v ,f=1mhz 1.0 w c iss input capacitance 67 00 c oss output capacitance 10 00 c rss reverse transfer capacitance v gs =0v, v ds = 30 v, frequency=1.0mhz 51 0 pf t d ( on ) turn - on delay time 23 41 t r turn - on rise time 42 70 t d ( off ) turn - off delay time 120 210 t f turn - off fall time v dd = 35 v, r l = 35 w , i ds = 1a, v gen = 10v, r g =6 w 7 5 140 ns gate charge characteristics q g total gate charge 15 5 2 20 q gs gate - source charge 45 q gd gate - drain charge v ds = 30 v, v gs = 10v, i ds = 6 0 a 48 nc
c opyright ruichips semiconductor co . , ltd rev. c C j an ., 2010 3 www. ruichips .c om ru190n10 typical characteristics power dissipation drain current ptot - power (w) i d - drain current (a) tj - junction temperature (c) t j - junction temperature ( c) safe operat ion area thermal transient impedance i d - drain current (a) normalized effective transient v ds - drain - source voltage (v) square wave pulse duration ( sec)
c opyright ruichips semiconductor co . , ltd rev. c C j an ., 2010 4 www. ruichips .c om ru190n10 typical characteristics output characteristics drain - source on resistance i d - d rain current (a) r ds(on) - on resistance ( m ) v ds - drain - source voltage (v) i d - drain current (a) drain - source on resistance gate threshold voltage rds(on) - on - resistance ( m ) normalized threshold vlotage vgs - gate - source voltage (v) tj - junction temperature (c)
c opyright ruichips semiconductor co . , ltd rev. c C j an ., 2010 5 www. ruichips .c om ru190n10 typical characteristics drain - source on resistance source - drain diode forward normalized on resistance i s - source current (a) t j - junction te mperature (c) v sd - source - drain voltage (v) capacitance gate charge c - capacitance ( pf ) v gs - gate - source voltage (v) v ds - drain - source voltage (v) q g - gate charge (nc) r on @t= 25 o c:7.0m
c opyright ruichips semiconductor co . , ltd rev. c C j an ., 2010 6 www. ruichips .c om ru190n10 avalanche te st circuit and waveforms switching time test circuit and waveforms
c opyright ruichips semiconductor co . , ltd rev. c C j an ., 2010 7 www. ruichips .c om ru190n10 ordering and marking information ru 190n10 package (available) q:to - 247 ; r: to - 220 ; s: to - 263 operating temperature range c : - 55 to 175 oc assembly material g : green & lead free device packaging t : tube tr : tape & reel
c opyright ruichips semiconductor co . , ltd rev. c C j an ., 2010 8 www. ruichips .c om ru190n10 package information to - 220fb - 3l all dimensions refer to jedec standard do not include mold flash or protrusions mm inch mm inch symbol min nom max min nom max symbol min nom max min nom max a 4.40 4.57 4.70 0.173 0.180 0.185 ?p1 1.40 1.50 1.60 0.055 0.059 0.063 a1 1.27 1.30 1.33 0.050 0.051 0.052 e 2.54bsc 0.1bsc a2 2.35 2.40 2.50 0.093 0.094 0.098 e1 5.08bsc 0.2bsc b 0.77 - 0.90 0.030 - 0 .035 h1 6.40 6.50 6.60 0.252 0.256 0.260 b2 1.23 - 1.36 0.048 - 0.054 l 12.75 - 13.17 0.502 - 0.519 c 0.48 0.50 0.52 0.019 0.020 0.021 l1 - - 3.95 - - 0.156 d 15.40 15.60 15.80 0.606 0.614 0.622 l2 2.50ref . 0.098ref . d1 9.00 9.10 9.20 0.354 0.358 0.362 ?p 3.57 3.60 3.63 0.141 0.142 0.143 dep 0.05 0.10 0.20 0.002 0.004 0.008 q 2.73 2.80 2.87 0.107 0.110 0.113 e 9.70 9.90 10.10 0.382 0.389 0.398 1 5 7 9 5 7 9 e 1 - 8.70 - - 0.343 - 2 1 3 5 1 3 5 e 2 9.80 10.00 10.20 0.386 0.394 0.401
c opyright ruichips semiconductor co . , ltd rev. c C j an ., 2010 9 www. ruichips .c om ru190n10 to - 263 - 2l all dimensions refer to jedec standard do not include mold flash or protrusions mm inch mm inch symbol min nom max min nom max symbol min nom max min nom max a 4.40 4.57 4.70 0.173 0.180 0.185 l 2.00 2.30 2.60 0.079 0.090 0.102 a1 0 0.10 0.25 0 0.004 0.010 l3 1.17 1.27 1.40 0.046 0.050 0.055 a2 2.59 2.69 2.79 0.102 0.106 0.110 l1 - - 1.70 - - 0.067 b 0.77 - 0.90 0.030 - 0.035 l4 0.25bsc 0.01bsc b1 1.23 - 1.36 0.048 - 0.052 l 2 2.50ref. 0.098ref. c 0.34 - 0.47 0.013 - 0.019 0 - 8 0 - 8 c1 1.22 - 1.32 0.048 - 0.052 1 5 7 9 5 7 9 d 8.60 8.70 8.80 0.338 0.343 0.346 2 1 3 5 1 3 5 e 10.00 10.16 10.26 0.394 0.4 0.404 dep 0.05 0.10 0.20 0.002 0.004 0.008 e 2.54bsc 0.1bsc ?p1 1.40 1.50 1.60 0.055 0.059 0.063 h 14.70 15.10 15.50 0.579 0.594 0.610
c opyright ruichips semiconductor co . , ltd rev. c C j an ., 2010 10 www. ruichips .c om ru190n10 to - 247 all dimensions refer to jedec standard do not include mold flash or protrusions mm inch mm inch symbol min max min max symbol min max min max a 4.850 5.150 0,191 0.200 e 2 3.600 ref 0.142 re f a1 2.200 2.600 0.087 0.102 l 40.900 41.300 1.610 1.626 b 1.000 1.400 0.039 0.055 l1 24.800 25.100 0.976 0.988 b1 2.800 3.200 0.110 0.126 l2 20.300 20.600 0.799 0.811 b2 1.800 2.200 0.071 0.087 7.100 7.300 0.280 0.287 c 0.500 0.700 0.020 0.028 e 5.450 typ 0.215 typ c 1 1.900 2.100 0.075 0.083 h 5.980 ref. 0.235 ref. d 15.450 15.750 0.608 0.620 h 0.000 0.300 0.000 0.012 e1 3.500 ref. 0.138 ref.
c opyright ruichips semiconductor co . , ltd rev. c C j an ., 2010 11 www. ruichips .c om ru190n10 customer service worldwide sales and service : sales@ru i chips.com technical s upport : technical@ruichips.com investor relations contacts : investor@ruichips.com marcom contact: marcom@ruichips.c om editorial contact : editorial@ruichips.com hr conta c t: hr@ruichips. com legal contact: legal@ruichips.com shen zhen ruichips semiconductor co., ltd room 501, the 5floor an tong industrial bui l ding, n o.207 mei hua road fu tian area shen zhen city , chi na tel: ( 86 - 755) 8311 - 5334 f ax : (86 - 755) 8311 - 4278 e - mail: sales - sz@ruichips.com

▲Up To Search▲

Price & Availability of RU190N10Q

	To Download RU190N10Q Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .